| PART |
Description |
Maker |
| X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制（数字电位器）电位
IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP
AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
| AM29F400BT-70EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Spansion, Inc.
|
| PUMA67S16000M-025 PUMA2S16000I-45 PUMA67S16000I-45 |
150NS, PLCC, COM TEMP(FLASH)
15NS, 44 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA)
20NS, 44 PLCC, COM TEMP(EPLD)
150NS, TSOP, IND TEMP(FLASH)
20NS, 44 TQFP, IND TEMP(EPLD)
120NS, SOIC, IND TEMP(EEPROM)
70NS, TSOP, IND TEMP(EEPROM)
15NS, 68 PLCC, IND TEMP(EPLD)
25NS, 68 PLCC, IND TEMP(EPLD)
30MHZ, 32 TQFP, COM TEMP(FPGA)
120NS, PDIP, IND TEMP(EEPROM)
32 MCROCELL CPLD 1.8V ISP TQFP IND GREEN(EPLD)
x32 SRAM Module X32号的SRAM模块
90NS, TSOP, IND TEMP(EEPROM) X32号的SRAM模块
120NS, PLCC, IND TEMP(EEPROM)
|
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4 |
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC74HC251AP TC74HC251AF TC74HC251 |
Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 8通道多路复用器（3国）
8 CHANNEL MULTIPLEXER (3 STATE)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| NTGS3136P NTGS3136PT1G |
-20V, -5.8A, Single P-Channel, TSOP-6
Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6
|
ON Semiconductor
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
|
Microsemi Corporation
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| 1N6525U |
High Voltage Diodes - Surface Mount 150mA - 250mA l 70ns l Hermetic
|
Voltage Multipliers Inc...
|
| HY57V281620HCT-H HY57V281620HCLT-K |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
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